Stacked multi-component integrated circuit microprocessor

ABSTRACT

An apparatus and method for fabricating-a microprocessor comprising a first chip ( 12 ) having an active face ( 30 ) including a central processing unit and a second chip ( 14 ) having an active face ( 32 ) electrically connected to the active face of the first chip ( 12 ), wherein the second chip ( 14 ) provides added functionality to the central processing unit of the first chip ( 12 ) and wherein the electrical connections ( 16, 18 ) are through bonding layers ( 28 ) that are in contact with the metalization  26  on the first and second chips ( 12, 14 ), is disclosed.

TECHNICAL FIELD OF THE INVENTION

This invention relates, in general, to the field of integrated circuitsand, more particularly, to an apparatus and method for assemblingintegrated circuit microprocessors in a compact structure that maximizesspacial and manufacturing efficiency.

BACKGROUND

During the manufacture of integrated circuits, the processing of thesemiconductor layers that form the circuitry of the integrated circuitis one of the most critical steps. In fact, as integrated circuitprocessor designs increase in complexity, the need to maximize the yieldat every layering step becomes increasingly important.

Heretofore in this field, electronic systems such as computers, cellulartelephones, etc., were built with individual components that wereassembled on a circuit board. For example, an electronic system such asa computer generally includes a microprocessor, an input/output or businterface, a memory cache, keyboard control circuits, video circuits,and a floppy disk drive, hard disk drive and/or CD-ROM control circuits.The central component of the electronic system is the processor, nowgenerally called a microprocessor to indicate the decreasing size of theindividual electronic components.

Using the microprocessor that forms part of the electronic system, as anexample, it can be observed that the following evolution has occurred.The creation of the logic that forms the main component of themicroprocessor on a single silicon substrate was a first step. A secondstep was to decrease the distance between the logic of the processor andthe bit buffering components that the microprocessor uses to controlprocessor flow by creating a single chip containing the microprocessorand a cache memory. A third step was the integration of amicroprocessor, cache memory and an input/output bus interface, also ona single chip.

United States Letters Patent No. 5,561,594, issued Oct. 1, 1996(SGS-Thomson Microelectronics, Ltd.) discloses an electrical assembly inwhich the electrical component is mounted on a multi-layer printedcircuit board having a plurality of conducting pins located inperforations within the board. The conducting pins located in the boardhave pointed ends that project above the board and make electric contactwith solder bumps on the electrical component. The specificationdescribes an apparatus and method for flip-chip packaging. As withconventional manufacturing, the printed circuit board has standard sizevias that are drilled through for each individual substrate.

United States Letters Patent No. 5,621,193, issued Apr. 15, 1997(Northrop Grumman Corp.) discloses a method for electrically connectingsurface conductors to edge conductors by use of an intersecting sidenon-conductor substrate having a through hole in the substrate andmetalization of the through hole. The electrical connections between thesurface and the side include forming an intersecting ceiling plug in thevia prior to cutting the intersecting side.

SUMMARY OF THE INVENTION

It has been recognized herein that a need has arisen for a simple,effective apparatus and method for providing a high frequencymicroprocessor that can be developed using present processing equipment,materials and techniques. The need has also arisen for a more versatilemicroprocessor design for medium to high performance semiconductors,using current substrates and methods of manufacturing substrates withincreased efficiency and decreased cost. Furthermore, a need has arisenfor a substrate that can be made using present equipment and usingstandard manufacturing techniques, but which decreases the total numberof layers deposited and etched on a monolithic substrate.

The present invention provides a simple, effective apparatus and methodfor designing, producing and packaging high performance ultra largescale integration (ULSI) semiconductor integrated circuits. The presentinvention can increase the efficiency of the production in manufactureof semiconductor integrated circuits. The present invention can alsodecrease the processing time and materials needed to manufacture ULSIsemiconductor integrated circuits.

One embodiment of the present invention is a microprocessor including afirst integrated circuit chip, having an active face including a centralprocessing unit, and a second integrated circuit chip electricallyconnected to the active face of the first integrated circuit chip. Thesecond integrated circuit chip provides added functionality to thecentral processing unit of the first integrated circuit chip. Examplesof central processing units for use with the present invention aredigital signal processors or field programmable gate arrays.

The second integrated circuit chip adds functionality to the firstintegrated circuit chip by, for example, providing accessible memory ora cache, such as a level 1 or 2 cache, at a short distance without theneed for long routing lines within the substrate of the first integratedcircuit chip. Examples of memory chips that can be used include but arenot limited to: DRAM, SRAM or FLASH. Alternatively, the secondintegrated circuit chip can be an analog-to-digital converter or adigital-to-analog converter.

More particularly, the present invention has a first integrated circuitchip that is used as a base to support another integrated circuit chip,such as a memory circuit. A third integrated circuit chip may also bedisposed adjacent to the second integrated circuit chip. In oneembodiment, the second integrated circuit is “piggybacked” onto thefirst integrated circuit by flipping it so that the active components ofthe integrated circuit are exposed and available to make contact withthe first integrated circuit chip.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the features and advantages of thepresent invention, reference is now made to the detailed description ofthe invention along with the accompanying figures in which correspondingnumerals in the different figures refer to corresponding parts and inwhich:

FIG. 1 is an isometric view of a microprocessor of the presentinvention;

FIG. 2 is a side view of a microprocessor according to anotherembodiment of the present invention; and

FIG. 3 is a close-up side view of a microprocessor contact.

DETAILED DESCRIPTION OF THE INVENTION

While the making and using of various embodiments of the presentinvention are discussed in detail below, it should be appreciated thatthe present invention provides many applicable inventive concepts whichcan be embodied in a wide variety of specific contexts. The specificembodiments discussed herein are merely illustrative of specific ways tomake and use the invention and do not delimit the scope of theinvention.

Integration of ultra large scale integrated (ULSI) circuits comes in theform of, for example, the Cyrix 6×86MX. This integrated microprocessorincorporates the following electronic components into a single chip: aBus interface, a memory management unit, a control unit, code and datacache, line cache, prefetching IF, instruction decode, v- and u-pipes,Registers, a floating processor unit and other components.

The large scale integration of ULSI components has led to a number ofpackaging problems and limitations. One such case is the embedding of alarge memory core (like a DRAM) in a microprocessor or other processinglogic such as field programmable gate arrays (FPGA), one example ofwhich is a large application specific integrated circuit (ASIC) orsubsystem. To integrate these different electronic components, the chipmust be manufactured using a diverse mix of integrated circuitprocessing technologies, namely, those to manufacture a processor andthose to manufacture memory. As the different electronic components ofthe processor require deposition of different layers, materials,etching, etc., on a single wafer, the problem of integrating a largernumber of electronic components having smaller electrical components isincreased geometrically. For a microprocessor, one example ofcombination processing is the formation of DRAM followed by theformation of ASIC components. Similar examples include the combinationof a FLASH or SRAM memory formation process, followed by an ASIC processor vice-versa. Unfortunately, this mixing of technologies requires acompromise from each of the components used.

For example, a DRAM process that is specifically customized for creatingDRAM cells, presently requires 2-4 polysilicon layers and typically 1-2metal layers. An SRAM forming process will be customized accordingly,requiring 2-4 polysilicon layers and 2-3 metal layers. An ASIC processis one designed to support microprocessors specifically built for aparticular logic and can be composed of 1 polysilicon and 4-5 metallayers. A combination of such electronic components, even whenmaximizing the efficiency of embedding like components of a DRAM andmicroprocessor unit, requires from between 2 to 4 poly silicon layersand 4 to 5 metal layers. To satisfy the requirements necessary to builda DRAM memory cell including the extensive interconnections, requires,at this level of integration, to route multiple address lines and databusses from the many cells to the microprocessor.

The present inventors have recognized the limitations of cost andperformance of merging the functions of a microprocessor and, e.g.,DRAM, SRAM or embedding memories on a single monolithic chip. Theproblem can be further illustrated by the use of multi-chip carriers forthe Pentium microprocessor or the circuit board for the Pentium II inwhich all the electronic components are embedded in a single monolithicchip.

While a number of processing solutions have provided cost-effectivemethods to produce higher levels of integrations on a single chip,combination microprocessors have reduced performance over what couldotherwise be obtained from a monolithic solution, if such wereavailable.

Turning now to the present invention, FIG. 1 is an isometric view of anintegrated circuit microprocessor generally depicted as 10. Theintegrated circuit microprocessor 10 has a first integrated circuit chip12, shown here with the active components 30 and the backside of thesilicon not having any active circuit disposed thereon face down. Theamount and types of electronic circuits that are disposed as activecomponents 30 integral with integrated circuit chip 12 will depend onthe specific logic processor required. Types of integrated circuits thatmay be used include the logic necessary to provide a central processingunit, such as, a digital signal processor or an ASIC processor.

A second integrated circuit chip 14 is depicted connected to integratedcircuit chip 12. Extending from the integrated circuit chip 12, andbeing integral therewith, are electrical contacts 16. Electricalcontacts 16 generally rise from the integrated circuit chip 12 surfaceand are used to connect active components 30 of the integrated circuitchip 12 with active components (not depicted) integral with the secondintegrated circuit chip 14. One aspect of the present invention that isapparent from the isometric view is that the distance betweenconnections among active components on the chips 12 and 14 is greatlyreduced by not having a connector, such as wire bonding or solder ballsor columns between the first and second integrated circuit chips 12, 14.The distance between the chips 12, 14 can be about that of amicro-solder ball. Generally, solder balls range in size from about 8 to200 microns in thickness.

The electrical contacts 16 form an electrical connection with theelectrical contacts 18 of integrated circuit chip 14, e.g., by bumpbonding or by solder reflow of metalization layers (describedhereinbelow). The electrical contacts 18 of the second integratedcircuit chip 14 can also be integral with the second integrated circuitchip 14 and electrically connect to its active components. Finally,disposed on the same surface of the integrated circuit chip 12 as theelectrical contacts 16, are pads 20 that serve to connect the integratedcircuit microprocessor 10 with a mother or sister-board.

FIG. 2 is a cross-sectional side view of an integrated circuitmicroprocessor 10 made in accordance with the present invention. Inorder to provide for the electrical connection of the integrated circuitmicroprocessor 10, the pads 20 are located so as to permit thedeposition of solder balls, solder columns or connection by wire bondingfor connection with, e.g., a printed circuit board such as a mother orsister board. To do so, the size of the second integrated circuit chip14 is less than the size of the integrated circuit chip 12.Alternatively, the second integrated circuit chip 14 can be offsetsufficiently from the top surface of the integrated circuit chip 12 toprovide for an opening through which connections from pads 20 may bemade.

As seen from the side view of FIG. 2, the electrical contacts 16 and 18are integral with the integrated circuit chips 12, 14 and 15. Theelectrical contacts 16, 18 are disposed on the face containing activecomponents. 30 and 32 of the chips 12, 14 and 15. By positioningintegrated circuit chips 14 and 15 in such close proximity to the activecomponents of the integrated circuit chip 12, the distance thatelectrical signals must travel between active components 30 and 32 isgreatly reduced in comparison to placing the equivalent circuit on realestate adjacent the processor logic on a monolithic chip. Furthermore,the number of reroute lines, such as route address lines and data buslines, occupying real estate on the active surface of the chip 12 andchips 14 and 15 are reduced.

Also, by positioning a separate integrated circuit that addsfunctionality to the first integrated circuit, such as providingadditional local FLASH memory, an L1 or L2 cache, or a digital-to-analogconverter, the ancillary or complementary features and functionality ofintegrated circuit microprocessor 10 can be changed without having tocompletely redesign the active components of the microprocessor. Forexample, different memory capacities can be positioned on the integratedcircuit chip 12 through contacts designed at the same position.

The present invention maximizes the efficiency of the creation of theindividual components of a microprocessor by permitting the manufacturerto optimize the processing steps, and consequently the quality, of thedifferent components. For example, the first integrated circuit chip 12can have disposed thereon only a central processing unit. Memory that israpidly accessible to the central processing unit can be disposeddirectly thereon in the form of the second integrated circuit chip 14,as can other functionalities such as audio or video processors.

Yet another advantage of the present invention is the m recognition thatthe components that make up these “ancillary” functionalities can changeover time. The present invention permits for the rapid replacement, inthe microprocessor assembly line, of old outdated components for newcomponents. The replacement of ancillary components can occur withoutthe need to change the original design of the integrated circuitmicroprocessor to accommodate the new functionality. The presentinvention also eliminates the need to completely redesign the entiresurface of a monolithic fully integrated chip as is presently done, asthe new updated components can be piggy-backed directly on chips withpre-existing designs.

A problem with variable heating within combination microprocessors onmonolithic chips has been encountered. By using separate integratedcircuit units, the variance in the power requirements and, consequently,the heat production of a single monolithic chip, having a wide array ofdifferent functionalities, may be reduced.

FIG. 3 is a close-up of one electrical contact 18 for use with thepresent invention. The active components 32 of the integrated circuitchip 14 are depicted in this cross-section as separated by a dielectricor electrically insulative layer 24. Disposed on the insulative layer 24is patterned a metalization layer 26 that provides for isolatedelectrical contacts between the integrated circuit chips 12 and 14. Themetalization layer 26 connects to the active components 32 of chip 14 byhaving an electrical connection (not depicted) that crosses insulativelayer 24. To provide an integral contact, a rise 22 that is eitherinsulative or conductive, can be deposited on the insulative layer 24.The rise 22 can also be coated with the metalization 26. Finally, abonding layer 28 can be disposed on the metalization 26. The depositedbonding layer 28 (as opposed to adding connectors such as wire bondingor solder balls) can be, e.g., gold, tin, iridium, copper, orcombinations thereof. The bonding layer 28 provides a direct connectionof metalization layers 26 on the active faces of the integrated circuitchips by having an electrical contact between the electrical contacts 16and 18. By a direct connection it is meant that the connection betweenmetalization 26 and the adjacent integrated circuit chip does notrequire and intermediate electrically conductive component, e.g., asolder ball. The bonding layer 28 can also be thermocompressible toprovide for a mechanical bond between the contacts 16 and 18. Themechanical bond helps to retain, e.g., the second integrated circuitchip 14 on the integrated circuit chip 12, whether or not the integratedcircuit chips 12 and 14 are further packaged or encapsulated.

The invention disclosed here allows for optimization of cost andperformance of individual components to develop an electronic system orsub-system. Accordingly, in one embodiment the present inventionincludes combining a microprocessor with a separate memory, such asDRAM. The microprocessor can be manufactured in a process with a highlevel of interconnects, such as having 4 to 5 metal layers. Likewise,memory can be produced and the process of its production optimized.

The present invention has the following advantages. First, it combinestwo or more integrated circuits into a more compact structure over chipcarriers (packaging solutions) or printed circuit boards. It also allowsindividual components, such as the microprocessor's CPU and the memoryor cache, to be manufactured using processes and technology thatoptimize the speed, performance and cost of that component. Furthermore,the invention allows higher integration of components that otherwisemight be limited.

The present inventors have solved the problem posed by the limitsimposed by the monolithic embedding of circuits, such as embeddedapplications. By emphasizing the efficiency of production of individualcomponents the assembly process need only be expanded to support thepackaging requirements of the individual components.

The present invention also improves the performance of the functionalcomponents that comprise the overall microprocessor by eliminatingpackaging or wiring delays by having direct contact between theintegrated circuit processor and ancillary components. It is expectedthat using the present invention, high frequencies in the 500 Megahertzto 7 Gigahertz can be supported and achieved.

While this invention has been described in reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

1. A microprocessor comprising: a first integrated circuit chip havingan active face including a central processing unit; and a secondintegrated circuit chip mounted on, and electrically connected to, theactive face of the first integrated circuit, wherein the secondintegrated circuit chip provides added functionality to the centralprocessing unit of the first integrated circuit, wherein at least onemetal region projecting from the active face of the first integratedcircuit chip overlies at least one metal region projecting from asurface of the second integrated circuit chip, and wherein the secondintegrated circuit chip is spaced apart from the first integrated chipby a distance of at least a projection height of the at least one metalregion projecting from the active face of the first integrated circuitchip plus a projection height of the at least one metal regionprojecting from the surface of the second integrated circuit chip,wherein the distance is sufficient to permit electrical connection tocontact pads on the active surface of the first integrated circuit chipfor external connection to the central processing unit.
 2. Themicroprocessor of claim 1, wherein the central processing unit comprisesone of a digital signal processor and a field programmable gate array.3. The microprocessor of claim 1, wherein an active face of the secondintegrated circuit chip faces the active face of the first integratedcircuit chip.
 4. The microprocessor of claim 1, wherein the secondintegrated circuit chip comprises one of a memory and ananalog-to-digital converter.
 5. The microprocessor of claim 4, whereinthe second integrated circuit comprises one of a cache memory, a dynamicrandom access memory (DRAM), a static random access memory (SRAM), and aflash memory.
 6. The microprocessor of claim 1, further comprising: abonding layer between and electrically connecting the at least one metalregion projecting from the active face of the first integrated circuitchip and the at least one metal region projecting from a surface of thesecond integrated circuit chip, wherein the bonding layer providesmechanical bonding of the first and second integrated circuit chips. 7.The microprocessor of claim 1, further comprising: at least two groupsof contact pads on the active surface of the first integrated circuitchip for external connection to the central processing unit, wherein thesecond integrated circuit chip has a width less than a distance betweenthe two groups of contact pads.
 8. The microprocessor of claim 1,further comprising: a third integrated circuit chip mounted on, andelectrically connected to, the active face of the first integratedcircuit adjacent the second integrated circuit chip, wherein the thirdintegrated circuit chip adds further functionality to the centralprocessing unit of the first integrated circuit.
 9. The microprocessorof claim 1, wherein the electrical connection between the firstintegrated circuit chip and the second integrated circuit chip is bydirect connection of metal regions on the active faces of the first andsecond integrated circuit chips by a bonding layer.
 10. Themicroprocessor of claim 1, wherein a length and width of the secondintegrated circuit chip are less than a respective length and width ofthe first integrated circuit chip.
 11. A microprocessor comprising: afirst chip having an active face including a central processing unit;and a second chip having an active face, the second chip mounted on, andelectrically connected to, the active face of the first chip, whereinthe second chip adds functionality to the central processing unit of thefirst chip and wherein the electrical connection is by a bonding layerbetween metal regions on the active faces of the first and second chips,and wherein at least one of the metal regions on the active surface ofthe first chip is disposed over a portion of an integrated circuitforming the central processing unit.
 12. The microprocessor of claim 11,wherein the metal regions further comprise one of: conductive regionsprojecting from the active faces of the first and second chips; andconductive layers over insulating regions projecting from the activefaces of the first and second chips, wherein the active regions of thefirst and second chips are spaced apart by the metal regions.
 13. Themicroprocessor of claim 11, wherein the central processing unitcomprises one of a digital signal processor and a field programmablegate array.
 14. The microprocessor of claim 11, wherein the second chipcomprises one of a memory and an analog-to-digital converter.
 15. Themicroprocessor of claim 11, further comprising: a third chip mounted on,and electrically connected to, the active face of the first chipadjacent the second chip wherein the third chip adds furtherfunctionality to the central processing unit of the first chip.
 16. Themicroprocessor of claim 11, wherein a width of the second integratedcircuit chip is less than a width of the first integrated circuit chip.